Silicon carbide (SiC) is a chemical compound that has low concern for damage even in excessive use as it has better corrosion resistance, heat conductivity, and chemical resistance, and low coefficient of thermal expansion compared to existing silicon and quartz materials used in the LP-CVD process.
As high purity SiC fixtures are stable in high temperature of over 1200℃, it is expected to largely contribute to enhancing quality and efficiency in semiconductor diffusion process, atmospheric pressure CVD and LP-CVD processes.
Micro structure control technology, high toughness silicon carbide, and high toughness silicon carbide as industrial and structural silicon carbide parts, can be developed into cutting tools, mechanical seals, high temperature, spring, and engine parts as industrial and structural silicon carbide parts, and currently, through active R&D, the efforts to apply in actual parts manufacturing is continued.