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SiC

SiC
Summary of Silicon Carbide
  • 제품문의 버튼
Silicon carbide (SiC) is a chemical compound that has low concern for damage even in excessive use as it has better corrosion resistance, heat conductivity, and chemical resistance, and low coefficient of thermal expansion compared to existing silicon and quartz materials used in the LP-CVD process. As high purity SiC fixtures are stable in high temperature of over 1200℃, it is expected to largely contribute to enhancing quality and efficiency in semiconductor diffusion process, atmospheric pressure CVD and LP-CVD processes. Micro structure control technology, high toughness silicon carbide, and high toughness silicon carbide as industrial and structural silicon carbide parts, can be developed into cutting tools, mechanical seals, high temperature, spring, and engine parts as industrial and structural silicon carbide parts, and currently, through active R&D, the efforts to apply in actual parts manufacturing is continued.
Material Property
Chemical property
Silicon carbide, an extremely stable chemical compound, will not erode in solutions of HCI, HF, H2, H2SO4, NaOH, etc.
Electrical and mechanical properties
While pure silicon carbide simple crystal is an insulator in room temperature, its property changes greatly according to the types and amount of impurities.
CVD-SiC coating product
After coating CVD on the surface of SiC, the surface membrane becomes more compact substance and stops the diffusion of impurities, and has increased corrosion resistance to most acidic solutions.
Product Introduction
BOAT type
Container shaped product for transporting wafer to the next process in the thermal oxidation diffusion CVD process
TUBE
A product that covers boat type product in the thermal oxidation diffusion CVD process
CAP
A product that supports SiC and insulates it to prevent internal heat loss
Other products
Various semiconductor fixtures for ring type
Table of Material Property Omitted
Purity(%) >99.9 (CVD>7N)
Bulk Density(g/cm³) >2.95
Load0.5Kg HV1=9.807N Vickers Hardness(GPa) 22
Bending Strength(MPa) >240
Compressive Strength(MPa) 1600
Youngs Modulus(GPa) 340
Poissons Ratio 0.16
Thermal Conductivity(W/mK) 190
Thermal Expansion(x10-6/°C) 25~400℃ : 3.8
25~800℃ : 4.6
Specific Heat([RT]J/kg.K) 0.7
Volume Resistivity(Ω. ㎝) 10-1
Dielectric Constant(25°C 1MHz) 8